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| UNISONIC TECHNOLOGIES CO., LTD 2SC5353 HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications NPN SILICON TRANSISTOR FEATURES * Excellent switching times: tR = 0.7s(MAX), tF = 0.5s (MAX) * High collectors breakdown voltage: VCEO = 800V *Pb-free plating product number: 2SC5353L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SC5353-T60-K 2SC5353L-T60-K 2SC5353-T6C-K 2SC5353L-T6C-K 2SC5353-TA3-T 2SC5353L-TA3-T 2SC5353-TF3-T 2SC5353L-TF3-T Package TO-126 TO-126C TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Bulk Bulk Tube Tube www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-031,D 2SC5353 ABSOLUTE MAXIMUM RATINGS (Tc = 25) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO IC ICP IB NPN SILICON TRANSISTOR RATINGS UNIT 900 V 800 V 7 V DC 3 A Collector Current 5 Pulse Base Current 1 A TO-220F/ TO-126/TO-126C 20 Collector Power Dissipation PD W TO-220 25 Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Tc = 25) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL BVCBO BVCEO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) TEST CONDITIONS IC=1 mA, IE = 0 IC=10 mA, IB = 0 VCB=720V, IE= 0 VEB=7V, IC= 0 VCE=5 V, IC=1 mA VCE=5 V, IC=0.15 A IC=1.2 A, IB=0.24 A IC=1.2 A, IB=0.24 A MIN 900 800 TYP MAX UNIT V V 100 A 10 A 10 15 1.0 1.3 V V Storage Time tSTG IB2 Switching Time IB1 300 Rise Time tR 0.7 S 4.0 Fall Time tF 0.5 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-031,D 2SC5353 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collector Current, IC (A) Collector Current, IC (A) DC Current Gain vs. Collector Current Collector-Emitter Saturation Voltage, VCE (SAT) (V) 1000 10 Collector-Emitter Saturation Voltage vs. Collector Current Common emitter IC/IB = 3 DC Current Gain, hFE 100 TC=100 25 10 -20 Common emitter VCE = 5 V 0.01 0.1 1 Collector Current, IC (A) 10 1 TC=100 25 -20 0.1 1 Collector Current, IC (A) 10 0.1 1 0.001 0.05 0.01 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-031,D 2SC5353 TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Power Dissipation, PD (W) Collector Current, IC (A) 4 of 4 QW-R203-031,D |
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